MRFG35010AR1 Datasheet PDF - NXP Semiconductors.

Gallium Arsenide PHEMT
RF Power Field Effect Transistor

Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB or Class A linear base station applications.

• Typical Single-Carrier W-CDMA Performance: VDD = 12 Volts, IDQ =
   140 mA, Pout = 1 Watt Avg., f = 3550 MHz, Channel Bandwidth =
   3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
      Power Gain —10 dB
      Drain Efficiency — 25%
      ACPR @ 5 MHz Offset — -43 dBc in 3.84 MHz Channel Bandwidth
• 10 Watts P1dB @ 3550 MHz, CW
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.