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MRF5S19100HSR3 Datasheet PDF - Freescale Semiconductor

Part Name
Description
MFG CO.
MRF5S19100HSR3
Freescale
Freescale Semiconductor Freescale
Other PDF
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MRF5S19100HSR3 Datasheet PDF : PDF DOWNLOAD     
MRF5S19100HSR3 image

RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs

Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

• Typical 2-Carrier N-CDMA Performance: VDD = 28 Volts,
   IDQ = 1000 mA, Pout = 22 Watts Avg., Full Frequency Band. IS-95 (Pilot,
   Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =
   1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
      Power Gain — 13.9 dB
      Drain Efficiency — 25.5%
      IM3 @ 2.5 MHz Offset — -36.5 dBc in 1.2288 MHz Channel Bandwidth
      ACPR @ 885 kHz Offset — -50.7 dBc in 30 kHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW Output Power

Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.

 

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