NPN SILICON ANNULAR TRANSISTORS
. . . designed for low-current amplifier applications.
• Collector-Emitter Breakdown Voltage - BVCEO = 45 Vdc (Min) @ Ic = 1.0 mAdc• Output Capacitance - Cob= 3.5 pF (Max) @ VCB = 10 mAdc• Full Designers Curves