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MMZ25332B4T1 Datasheet PDF - NXP Semiconductors.

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Description
MFG CO.
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MMZ25332B4T1 Datasheet PDF : PDF DOWNLOAD     
MMZ25332B4 image

1500–2700 MHz, 26.5 dB, 33 dBm InGaP HBT LINEAR AMPLIFIER

The MMZ25332B4 is a versatile 2--stage power amplifier targeted at driver and pre--driver applications for macro and micro base stations and final stage applications for small cells. Its versatile design allows operation in any frequency band from 1500 to 2700 MHz providing gain of more than 26.5 dB. The device operates off a 5 V supply, and its bias currents and portions of the matching networks are adjustable for optimum performance in any specific application. It is housed in a QFN 4 x 4 surface mount package which allows for maximum via hole pattern. The MMZ25332B4 offers exceptional reliability, ruggedness and ESD performance.


● Typical Performance: VCC1 = VCC2 = VBIAS = 5 Vdc, ICQ = 400 mA
 
Features
● Frequency: 1500–2700 MHz
● P1dB: 33 dBm @ 2500 MHz
● Power gain: 26.5 dB @ 2500 MHz
● OIP3: 48 dBm @ 2500 MHz
● EVM ≤ 3% @ 23.5 dBm Pout, WLAN (802.11g)
● Active bias control (adjustable externally)
● Power down control via VBIAS
● Single 3 to 5 volt supply
● Single--ended power detector
● Cost--effective 24--pin, 4 mm QFN surface mount plastic package

 

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