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FQPF10N50CF Datasheet PDF - Fairchild Semiconductor

Part Name
Description
MFG CO.
FQPF10N50CF
Fairchild
Fairchild Semiconductor Fairchild
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FQPF10N50CF Datasheet PDF : PDF DOWNLOAD     
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Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

Features
• 10A, 500V, RDS(on) = 0.61 Ω @VGS = 10 V
• Low gate charge (typical 43 nC)
• Low Crss (typical 16pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Fast recovery body diode

 

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