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FQP55N10 Datasheet PDF - Fairchild Semiconductor

Part Name
Description
MFG CO.
FQP55N10
Fairchild
Fairchild Semiconductor Fairchild
Other PDF
  no available.
PDF
FQP55N10 Datasheet PDF : PDF DOWNLOAD     
FQP55N10 image

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control

Features
• 55A, 100V, RDS(on) = 0.026Ω @VGS = 10 V
• Low gate charge ( typical 75 nC)
• Low Crss ( typical 130 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

 

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