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FQP18N50V2 Datasheet PDF - Fairchild Semiconductor

Part Name
Description
MFG CO.
FQP18N50V2
Fairchild
Fairchild Semiconductor Fairchild
Other PDF
  no available.
PDF
FQP18N50V2 Datasheet PDF : PDF DOWNLOAD     
FQPF18N50V2 image

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.

Features
• 18A, 500V, RDS(on) = 0.265Ω @VGS = 10 V
• Low gate charge ( typical 42 nC)
• Low Crss ( typical 11 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

 

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