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FQD2N60C Datasheet PDF - ON Semiconductor

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Description
MFG CO.
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FQD2N60C image

No description availableMOSFET – N-Channel, QFET 600 V, 1.9 A, 4,7 Ω

This N−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Features
• 1.9 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V, ID = 0.95 A
• Low Gate Charge (Typ. 8.5 nC)
• Low Crss (Typ. 4.3 pF)
• 100% Avalanche Tested
• These Devices are Halid Free and are RoHS Compliant

 

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