CEU3100 Datasheet PDF - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
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CEU3100 Datasheet PDF :
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Description：
This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.
It can be used in a wide variety of applications.
Features：
1) VDS=30V,ID=55A,RDS(ON)<10mΩ @VGS=10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra Iow RDS(ON).
5) Excellent package for good heat dissipation.
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