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BLL1214-250 Datasheet PDF - Philips Electronics

Part Name
Description
MFG CO.
BLL1214-250
Philips
Philips Electronics Philips
Other PDF
  no available.
PDF
BLL1214-250 Datasheet PDF : PDF DOWNLOAD     
BLL1214-250 image

DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the flange.

FEATURES
• High power gain
• Easy power control
• Excellent ruggedness
• Source on mounting base eliminates DC isolators,
   reducing common mode inductance.

APPLICATIONS
• L-band radar applications in the 1200 to 1400 MHz
   frequency range.

 

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