Qdatasheet_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

BLC9G27LS-150AV Datasheet PDF - NXP Semiconductors.

Part Name
Description
MFG CO.
BLC9G27LS-150AV
NXP
NXP Semiconductors. NXP
Other PDF
  no available.
PDF
BLC9G27LS-150AV Datasheet PDF : PDF DOWNLOAD     
BLC9G27LS-150AV image

General description
150 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2496 MHz to 2690 MHz.

Features and benefits
■ Excellent ruggedness
■ High efficiency
■ Low thermal resistance providing excellent thermal stability
■ Decoupling leads to enable improved video bandwidth
■ Lower output capacitance for improved performance in Doherty applications
■ Designed for low memory effects providing excellent pre-distortability
■ Internally matched for ease of use
■ Integrated ESD protection
■ Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC

Applications
■ RF power amplifier for W-CDMA base stations and multi carrier applications in the
   2496 MHz to 2690 MHz frequency range

 

Share Link: 

All Rights Reserved © qdatasheet.com  [ Privacy Policy ] [ Contact Us ]