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BFP760 Datasheet PDF - Infineon Technologies

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Product Brief
The BFP760 is a linear and very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4.0 V and currents up to IC = 70 mA. With its high linearity at currents as low as 10 mA (see Fig. 5-8) the device supports energy efficient designs. The typical transition frequency is approximately 45 GHz, hence the device offers high power gain at frequencies up to 9 GHz in amplifier applications. The device is housed in an easy to use plastic package with visible leads.

• Very low noise amplifier based on Infineon´s reliable,
   high volume SiGe:C technology
• High linearity OIP3 = 27 dBm @ 5.5 GHz, 3 V, 30 mA
• High transition frequency fT = 45 GHz @ 1 GHz, 3 V, 35mA
• NFmin = 0.95 dB @ 5.5 GHz, 3 V, 10 mA
• Maximum power gain Gms = 21.5 dB @ 3.5 GHz, 3 V, 30 mA
• Low power consumption, ideal for mobile applications
• Easy to use Pb-free (RoHS compliant) and halogen-free
   standard package with visible leads
• Qualification report according to AEC-Q101 available

As Low Noise Amplifier (LNA) in
• Mobile and fixed connectivity applications: WLAN 802.11a/b/g/n/ac, WiMAX 2.5/3.5 GHz, Bluetooth
• Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB
• Multimedia applications such as mobile/portable TV, CATV, FM Radio
• UMTS/LTE mobile phone applications
• ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
As discrete active mixer, buffer amplifier in VCOs


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