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BFP750 Datasheet PDF - Infineon Technologies

Part Name
Description
MFG CO.
Other PDF
  2010  
PDF
BFP750 Datasheet PDF : PDF DOWNLOAD     
BFP750 image

Product Brief
The BFP750 is a wideband linear low noise NPN bipolar RF transistor. The device is based on Infineons reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4 V and currents up to IC = 120 mA. With its high linearity at currents as low as 20 mA the device supports energy efficient designs. The typical transistor frequency is approximately 41 GHz, hence the device offers high power gain at frequencies up to 7 GHz in amplifiers applications. The device is housed in an easy to use plastic package with visible leads.

Features
• Highly linear low noise amplifier for all RF frontends
   up to 5.5 GHz
• Output compression point OP1dB = 16 dBm
   at 60 mA, 3 V, 1.9 GHz, 50 Ω system
• Output 3rd order intermodulation point OIP3 = 30 dBm
   at 60 mA, 3 V, 1.9 GHz, 50 Ω system
• Maximum gain Gms = 19 dB at 60 mA, 3 V, 3.5 GHz
• Minimum noise figure NFmin = 0.9 dB at 30 mA, 3 V, 1.9 GHz
• Based on Infineon´s reliable, high volume SiGe:C wafer technology
• Easy to use Pb-free (RoHS compliant) and halogen-free standard
   package with visible leads
• Qualification report according to AEC-Q101 available

Application Examples
Driver amplifier
• 1.9 GHz and 5.8 GHz cordless phones
Transmitter driver amplifier
• 2.4 GHz WLAN / Bluetooth / WiMAX
• 3.5 GHz WiMax
• 5.5 GHz WLAN / WiMAX
Output stage LNA for active antennas
• GPS, SDARS
• 2.4 / 5.5 GHz WLAN
• 2.4 / 3.5 / 5.5 GHz WiMAX, etc
Suitable for 8 - 12 GHz oscillators

 

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