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BFP740FESD Datasheet PDF - Infineon Technologies

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Product Brief
The BFP740FESD is a very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports voltages up to VCEO = 4.2 V and currents up to IC = 45 mA. The device is especially suited for mobile applications in which low power consumption is a key requirement. The typical transition frequency is approximately 47 GHz, hence the device offers high power gain at frequencies up to 12 GHz in amplifier applications. The transistor is fitted with internal protection circuits, which enhance the robustness against electrostatic discharge (ESD) and high levels of RF input power. The device is housed in a thin small flat plastic package with visible leads.

• Robust very low noise amplifier based on
   Infineon´s reliable, high volume SiGe:C wafer technology
• 2 kV ESD robustness (HBM) due to integrated protection circuits
• High maximum RF input power of 21 dBm
• 0.60 dB minimum noise figure typical at 2.4 GHz,
   0.8 dB at 5.5 GHz, 6 mA
• 26 dB maximum gain Gms typical at 2.4 GHz,
   20.5 dB Gma at 5.5 GHz, 25 mA
• 23.5 dBm OIP3 typical at 5.5 GHz, 25 mA
• Thin small flat Pb-free (RoHS compliant) and halogen-free
   package with visible leads
• Qualification report according to AEC-Q101 available

As Low Noise Amplifier (LNA) in
• Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5/3.5/5 GHz, UWB, Bluetooth
• Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB
• Multimedia applications such as mobile/portable TV, CATV, FM Radio
• 3G/4G UMTS/LTE mobile phone applications
• ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
As discrete active mixer, amplifier in VCOs and buffer amplifier


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