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BFP720ESD Datasheet PDF - Infineon Technologies

Part Name
Description
MFG CO.
Other PDF
  2012  
PDF
BFP720ESD Datasheet PDF : PDF DOWNLOAD     
BFP720ESD image

Product Brief
The BFP720ESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) in a plastic dual emitter standard package with visible leads. The device is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. The device combines robustness with very high RF gain and lowest noise figure at low operation current for use in a wide range of wireless applications.

Features
• Robust high performance low noise amplifier based on
   Infineon´s reliable, high volume SiGe:C wafer technology
• 2 kV ESD robustness (HBM) due to integrated protection circuits
• High maximum RF input power of 21 dBm
• 0.65 dB minimum noise figure typical at 2.4 GHz,
   0.9 dB at 5.5 GHz, 5 mA
• 26 dB maximum gain (Gma, Gms) typical at 2.4 GHz,
   19.5 dB at 5.5 GHz, 15 mA
• 22 dBm OIP3 typical at 5.5 GHz, 15 mA
• Accurate SPICE GP model available to enable effective
   design in process (see chapter 6)
• Easy to use, Pb- and halogen free (RoHS compliant) standard package with visible leads

Applications
As Low Noise Amplifier (LNA) in
• Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5/3.5/5 GHz, UWB, Bluetooth
• Satellite communication systems: Navigation (GPS, Glonass), satellite radio (SDARs, DAB) and LNB
• 3G/4G UMTS/LTE mobile phone applications
• Multimedia applications such as mobile/portable TV, CATV, FM Radio
• ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
As discrete active mixer, amplifier in VCOs and buffer amplifier.

 

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