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FQD7N10LTF Datasheet PDF - Fairchild Semiconductor

Part Name
Description
MFG CO.
FQD7N10LTF
Fairchild
Fairchild Semiconductor Fairchild
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General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as high efficiency switching DC/DC converters, and DC motor control.

Features
• 5.8A, 100V, RDS(on) = 0.35Ω @VGS = 10 V
• Low gate charge ( typical 4.6 nC)
• Low Crss ( typical 12 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirments allowing direct operation from logic drives
• RoHS Compliant

 

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