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FQD6N40C Datasheet PDF - Fairchild Semiconductor

Part Name
Description
MFG CO.
FQD6N40C
Fairchild
Fairchild Semiconductor Fairchild
Other PDF
  2013   lastest PDF  
PDF
FQD6N40C Datasheet PDF : PDF DOWNLOAD     
FQD6N40C image

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.

Features
• 4.5A, 400V, RDS(on) = 1.0 Ω @VGS = 10 V
• Low gate charge ( typical 16nC)
• Low Crss ( typical 15pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS Compliant

 

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