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FQD5N15TM Datasheet PDF - Fairchild Semiconductor

Part Name
Description
MFG CO.
FQD5N15TM
Fairchild
Fairchild Semiconductor Fairchild
Other PDF
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PDF
FQD5N15TM Datasheet PDF : PDF DOWNLOAD     
FQD5N15 image

Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Features
• 4.3 A, 150 V, RDS(on) = 800 mΩ (Max.) @ VGS = 10 V, ID = 2.15 A
• Low Gate Charge (Typ. 5.4 nC)
• Low Crss (Typ. 7.5 pF)
• 100% Avalanche Tested

 

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