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FQD3N50C Datasheet PDF - Fairchild Semiconductor

Part Name
Description
MFG CO.
FQD3N50C
Fairchild
Fairchild Semiconductor Fairchild
Other PDF
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PDF
FQD3N50C Datasheet PDF : PDF DOWNLOAD     
FQD3N50C image

Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.

Features
• 2.5A, 500V, RDS(on) = 2.5Ω @VGS = 10 V
• Low gate charge ( typical 10 nC)
• Low Crss ( typical 8.5pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant

 

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