Qdatasheet_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

FQD1N50TF Datasheet PDF - Fairchild Semiconductor

Part Name
Description
MFG CO.
FQD1N50TF
Fairchild
Fairchild Semiconductor Fairchild
Other PDF
  no available.
PDF
FQD1N50TF Datasheet PDF : PDF DOWNLOAD     
FQU1N50 image

General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.

Features
• 1.1A, 500V, RDS(on) = 9.0Ω @VGS = 10 V
• Low gate charge ( typical 4.0 nC)
• Low Crss ( typical 3.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS Compliant

 

Share Link: 

All Rights Reserved © qdatasheet.com  [ Privacy Policy ] [ Contact Us ]