This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductorâ€™s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
â€¢ 11 A, 60 V, RDS(on) = 115 mâ„¦ (Max) @ VGS = 10 V, ID = 5.5 A
â€¢ Low Gate Charge (Typ. 4.8 nC)
â€¢ Low Crss (Typ. 17 pF)
â€¢ 100% Avalanche Tested
â€¢ Low Level Gate Drive Requirements Allowing Direct Operation form Logic Drivers