These P-Channel enhancement mode power field effect transistors are produced using Fairchildís proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
-9.4A, -60V, RDS(on)= 0.185Ω@VGS= -10 V
Low gate charge ( typical 13 nC)
Low Crss ( typical 45 pF)
100% avalanche tested
Improved dv/dt capability